Method and System for Generating a Photo-Response From MoS2 Schottky Junctions

Categories: “Physics, Optics and Electronic Devices“

Reference #: 2012-036

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Description

Like graphene, Molybdenum disulfide (MoS2) is a semiconductor that is gaining popularity due to its reduced dimensionality and large bandgap in nanoscale optoelectronic applications. MoS2 is made up of layers that can be easily separated to obtain few-layer or single-layer samples. When the thickness is reduced to single-layer, MoS2 possesses significant advantages over current materials such as graphene and carbon nanotubes. Such advantages include a direct and non-zero bandgap, making optoelectronic devices in the visible range possible.

Applications

• Visible light-emitting diodes (LEDs) for display technologies.
• Multiplexing/demultiplexing optical signals in fiber optic communication systems.
• Medical Instrumentation
• Basic electronic circuits (miniaturized diodes and transistors)
• Solar Panels/Photovoltaics
• Nano-Lasers
• Secondary Batteries

Advantages

• MoS2 substrate can show N-type transistor behavior, P-Type, or both.
• Unlike graphene, MoS2 has a direct and non-zero bandgap.
• Can generate higher conversion efficiency at room temperature.
• Nano-patterning of MoS2 makes it possible to tune the emission wavelength of light.

Stage of Development 

There are several working prototypes that have been developed. Some of the work has been published in Nature (referenced below).

Publications

“Electron-hole transport and photovoltaic effect in gated MoS2 Schottky junctions”. Fontana, M., Deppe, T., Boyd, A. K., Rinzan, M., Liu, A., Paranjape, M., Barbara, P. Nature: Scientific Reports, 2013. Doi: 10.1038/srep01634. 

Patent Status

U.S. Patent No. 8,766,330 granted July 1, 2014

Inventors

Makarand Paranjape, Barbara Paola, Amy Liu, Marcio Fontana